TECAWAFER PEEK LDS black 1066245

Advanced substrate materials, powered by PEEK

TECAWAFER PEEK LDS black is an innovative, 4-inch substrate made from the advanced material TECACOMP PEEK LDS, which serves as an excellent alternative to conventional materials such as silicon, ceramics, and glass. This versatile substrate is ideally suited for applications in sensor technology, electronics, and microsystems technology. With its low thermal conductivity, the TECAWAFER PEEK LDS black is optimally suited for use in temperature sensors and heating elements. Additionally, the wafer offers high elasticity, making it particularly suitable for pressure sensors.

The excellent resistance of the TECAWAFER PEEK LDS black to aggressive environments and its high voltage resistance make it an ideal choice for numerous industrial applications. TECAWAFER allows for flexible processing options such as laser cutting, milling, and drilling, significantly facilitating adaptation to specific requirements.

A significant advantage of the TECAWAFER PEEK LDS black is the optimisation of the processing process, as it reduces the need for additional insulation layers. Moreover, the material is recyclable and environmentally friendly, contributing to a reduced CO2 footprint. The substrate is compatible with conventional lithography and PVD coatings, simplifying the manufacturing of various microsystems. Additionally, the short supply chain ensures high availability of the TECAWAFER PEEK LDS black.

The outstanding surface roughness of the wafer ranges from 20 to 50 nm, with special tools capable of achieving roughness below 10 nm. The flatness is 50 to 100 µm over a diameter of 100 mm, and the wafer is available in thicknesses from 0.9 mm to 1.5 mm. With a temperature resistance of up to 250 °C and a high dielectric strength of 17.5 kV/mm, the TECAWAFER PEEK LDS black is particularly well-suited for applications in temperature and flow sensing as well as in high-frequency technology (approximately 25 to 77 GHz).

TECAWAFER PEEK LDS black offers a powerful and versatile solution for the challenges of microsystems technology and revolutionises substrate solutions for microsystems with its innovative properties. With its ease of functionalisation, integration, and customisation, TECAWAFER provides the foundation for entirely new possibilities in microsystems technology. Learn more about this and about EMST - the Ensinger Microsystems Technology.

Facts

Chemical designation
PEEK (Polyetheretherketone)
Colour
black
Density
1.67 g/cm3

Main Features

  • lithography capable
  • PVD / CVD capable
  • wirebonding possibile
  • electroplating possible
  • developed for the LPKF-LDS® process
  • reflow soldering possible
  • inherent flame retardant
  • low moisture absorption

Target industries

Downloads

Technical details

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  • product-technical-detail-collapse-item-0-lvl-1
    General material information Value Unit Parameter Norm
    thickness 1100 +-25 micro -
  • product-technical-detail-collapse-item-1-lvl-1
    Mechanical properties Value Unit Parameter Norm
    Tensile strength 102 MPa DIN EN ISO 527-1
    Elongation at break (tensile test) 2,3 % DIN EN ISO 527-1
    Impact strength (Charpy) 31 kJ/m2 DIN EN ISO 179-1eU
  • product-technical-detail-collapse-item-2-lvl-1
    Thermal properties Value Unit Parameter Norm
    Glass transition temperature 143 C -
    Melting temperature 343 C -
    Service temperature 300 C short term -
    Service temperature 260 C long term -
    Thermal expansion (CLTE) 26 106*K-1 in plane DIN EN ISO 11359-1;2
    Thermal expansion (CLTE) 18 106*K-1 perpendicular to the plane DIN EN ISO 11359-1;2
    Thermal expansion (CLTE) 67 106*K-1 in plane DIN EN ISO 11359-1;2
    Thermal expansion (CLTE) 46 106*K-1 perpendicular to the plane DIN EN ISO 11359-1;2
    Specific heat 0,97 J/(g*K) DIN EN 821
    Thermal conductivity 1,7 W/(k*m) in plane ISO 22007-4:2008
    Thermal conductivity 0,5 W/(k*m) perpendicular to the plane ISO 22007-4:2008
  • product-technical-detail-collapse-item-3-lvl-1
    Electrical properties Value Unit Parameter Norm
    surface resistivity 5,8 * 1012 DIN EN 61340-2-3
    Dielectric strength 17,5 kV/mm 70 mm x 70 mm x 3 mm ISO 60243-1
    Dielectric loss factor 0,004 test frequency of 1 GHz -
    Dielectric constant 3,6 test frequency of 1 GHz -
    Resistance to tracking (CTI) 225 V DIN EN 60112
  • product-technical-detail-collapse-item-4-lvl-1
    Other properties Value Unit Parameter Norm
    Water absorption 0,1 % 23 °C / 50 % relative humidity up to saturation DIN EN ISO 62
    Flammability (UL94) V0 - at 0,8 mm DIN IEC 60695-11-10;
    Adhesive strength (metal path) 19,4 N/mm2 -